Semiconductor device and method of forming the same

Abstract

A semiconductor structure and a method of fabricating the structure are disclosed. The method includes forming a superlattice structure with a nanostructured layer and a sacrificial nanostructured layer on a base structure on a substrate, forming a polysilicon structure on the superlattice structure, and forming a S / D region in the superlattice structure. A S / D portion of the S / D region extends above the nanostructured layer. The method further includes modifying a thickness of the S / D portion, depositing a dielectric layer on the modified S / D portion, and replacing the polysilicon structure and the sacrificial nanostructured layer with a gate structure.

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