Method of processing substrates and semiconductor assemblies having wide bandgap materials

Abstract

Methods for processing a semiconductor substrate are disclosed herein which include bonding to a silicon layer to a wide bandgap semiconductor layer through a dielectric layer, wherein the dielectric layer is bonded to at least one of the silicon layer or the wide bandgap semiconductor layer by a wafer-to-wafer or a die-to-wafer bonding process. Semiconductor assemblies are also disclosed herein.

Images