In-plane 2d telluride hetero-phase structures and methods for fabrication

TW202634952APending Publication Date: 2026-08-16ENTEGRIS INC +1
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Patent Information

Application Number
TW114142080
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-30
Filing Date
2025-10-30
Publication Date
2026-08-16

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    Figure TWG2TA001072869_003
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Abstract

A device includes a substrate, an insulator, a first semimetallic 1T' phase telluride portion, a semiconducting 2H phase telluride portion, and a second semimetallic 1T' phase telluride portion. The insulator is on the substrate. The first semimetallic 1T' phase telluride portion is on the insulator. The semiconducting 2H phase telluride portion is on the insulator and seamlessly connected at the atomic level to the first semimetallic 1T' phase telluride portion. The second semimetallic 1T' phase telluride portion is on the insulator and spaced apart from the first semimetallic 1T' phase telluride portion and seamlessly connected at the atomic level to the semiconducting 2H phase telluride portion.
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