GAN HEMT with reduced threshold shifting
TW202634953APending Publication Date: 2026-08-16EFFICIENT POWER CONVERSION CORP
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Patent Information
- Application Number
- TW114142219
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-31
- Filing Date
- 2025-10-30
- Publication Date
- 2026-08-16
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Abstract
A gallium nitride (GaN) transistor is provided having a voltage threshold at which the transistor turns ON. The transistor has one or more control electrodes and a gate electrode disposed on a GaN material layer. A bias is applied to the control electrode(s) to prevent shifting of the transistor voltage threshold.
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