Transistor device and manufacturing method thereof

Abstract

A transistor device and a manufacturing method thereof are provided. The transistor device includes a silicon carbide substrate, a silicon carbide epitaxial layer, a gate trench, a first conductive type doped body region and a boron ion doped interface. The silicon carbide epitaxial layer is disposed on the silicon carbide substrate. The gate trench is formed in the silicon carbide epitaxial layer, the first conductive type doped body region is adjacent to the sidewall of the gate trench and is disposed on the silicon carbide epitaxial layer, and the boron ion doped interface is disposed between the gate trench and the silicon carbide epitaxial layer.

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