Semiconductor devices and methods of forming the same

Abstract

A method that includes forming a contact opening through a semiconductor substrate that is overlying a source / drain region. The contact opening has a non-linear profile, wherein the non-linear profile includes sidewall with a corner section. An aluminum containing dielectric layer is formed on the corner section of the sidewall of the contact opening, and a protective liner is formed on the aluminum containing dielectric layer within the contact opening. The protective liner is etched to form protective spacers, wherein the aluminum containing dielectric layer protects the semiconductor substrate from being exposed at the corner section of the sidewall of the contact opening during the etching of the protective liner. A metal semiconductor alloy is formed on the source / drain region at the base of the contact opening.

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