Semiconductor device

Abstract

There is provided a semiconductor device having improved quality and performance. The semiconductor device comprising, a substrate, a first active pattern disposed on the substrate and extending in a first direction, a first gate structure disposed on the first active pattern and extending in a second direction intersecting the first direction, a second gate structure disposed on the first active pattern and spaced apart from the first gate structure in the first direction, wherein the second gate structure extends in the second direction, a first epitaxial pattern disposed between the first gate structure and the second gate structure and connected to the first active pattern, an insulating pattern covering at least a portion of an upper surface of the first epitaxial pattern, and a dummy contact disposed on an upper surface of the insulating pattern, wherein the dummy contact is spaced apart from the first epitaxial pattern via the insulating pattern.

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