Laterally-diffused metal-oxide semiconductor (LDMOS) devices including superlattice trench liner and related methods

Abstract

A laterally-diffused metal-oxide semiconductor (LDMOS) device may include a semiconductor layer having a trench therein, and a superlattice liner in the trench. The superlattice liner may include stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer, and each at least one non-semiconductor monolayer of each group of layers being constrained within a crystal lattice of adjacent base semiconductor portions. The LDMOS may further include a shallow trench isolation (STI) region within the trench, spaced-apart source and drain regions in the semiconductor layer on opposite sides of the trench, a gate on the semiconductor layer between the source and drain regions, and a drift region in the semiconductor layer surrounding the trench and separated from the STI region by the superlattice liner.

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