Low capacitance and multi-threshold voltage nanosheet device
TW202634974APending Publication Date: 2026-08-16INTERNATIONAL BUSINESS MACHINE CORPORATION
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Patent Information
- Application Number
- TW114143183
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-11-07
- Filing Date
- 2025-11-06
- Publication Date
- 2026-08-16
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Figure TWG2TA001072918_001 
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Abstract
A semiconductor device including nanosheets transistors that have low capacitance and different threshold voltages is provided. The different threshold voltages are obtained using different shaped semiconductor channel material nanosheets and, in some embodiments, by providing different dopant concentrations to the high-k gate dielectric layers of the nanosheet transistors.
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