Semiconductor structure and manufacturing method thereof

Abstract

A method includes: forming a dielectric layer on a substrate; forming an active region of a MOS device; forming a sacrificial gate structure of the MOS device; forming a source feature and a drain feature of the MOS device, wherein the drain feature is formed above the dielectric layer; replacing the sacrificial gate structure with a replacement metal gate; and forming a first backside power rail and a first backside VIA that connect to the drain feature through salicide formed in a recess in the dielectric layer; wherein the dielectric layer isolates the drain feature from the substrate.

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