Semiconductor structure and fabrication method thereof

Abstract

A semiconductor structure is provided. The semiconductor structure includes a carrier substrate, a semiconductor fin structure, a gate insulation layer, and a gate structure. The semiconductor fin structure is disposed over the carrier substrate and extending along a first direction. A width of the semiconductor fin structure varies along a second direction perpendicular to a top surface of the carrier substrate, with a widest portion of the semiconductor fin structure located at a middle of the semiconductor fin structure. The gate insulation layer is disposed on the semiconductor fin structure. The gate structure is disposed on the gate insulation layer.

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