Semiconductor structure and methods of forming the same

Abstract

A method includes forming nanostructures over a semiconductor substrate; forming a front-side interconnect structure over a front-side of the nanostructures; directly bonding a first side of a carrier substrate to the front-side interconnect structure using a dielectric-to-dielectric bonding process; depositing a dielectric layer on a second side of the carrier substrate; and forming a back-side interconnect structure over a back-side of the nanostructures. In an embodiment, the dielectric layer provides a tensile stress.

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