Semiconductor device and method of forming the same

Abstract

A semiconductor device and the method of forming the same are provided. The semiconductor device may include a first nanostructure, a first source / drain region on a sidewall of the first nanostructure, a first gate structure around the first nanostructure, a second nanostructure over the first nanostructure, a second source / drain region on a sidewall of the second nanostructure, and a second gate structure around the second nanostructure. The first nanostructure may comprise a first material with a first composition and a first crystal orientation. The second nanostructure may comprise a second material with a second composition and a second crystal orientation. The first composition may be different from the second composition, and the first crystal orientation may be different from the second crystal orientation.

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