Semiconductor device
TW202635004APending Publication Date: 2026-08-16SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- TW114131850
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-15
- Filing Date
- 2025-08-21
- Publication Date
- 2026-08-16
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Figure TWG2TA001072560_001 
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Abstract
A semiconductor device may include lower sheet patterns spaced apart from each other in a first direction, a lower gate electrode surrounding the lower sheet patterns and extending in a second direction intersecting with the first direction, upper sheet patterns disposed on the lower gate electrode and spaced apart from each other in the first direction, an upper gate electrode on the lower gate electrode, the upper gate electrode surrounding the upper sheet patterns and extending in the second direction, and an upper isolation layer penetrating an upper surface of the upper gate electrode and extending in the first direction. The upper isolation layer penetrates a portion of the upper sheet patterns.
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