Integrated circuit device

Abstract

Provided is an integrated circuit device including a substrate, an insulating pillar extending in a first direction intersecting one surface of the substrate, a first source / drain area at one side of the insulating pillar in a second direction intersecting the first direction, a second source / drain area at another side of the insulating pillar and spaced apart from the first source / drain area in the second direction, a first source / drain contact including at least a portion being in the first source / drain area and the second source / drain area, a first silicide layer between the first source / drain area and the first source / drain contact, and a second silicide layer between the second source / drain area and the first source / drain contact, wherein the first source / drain contact is connected with the insulating pillar.

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