Backside via to power rail via connection

Abstract

Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first and a second transistor; a power rail via between the first and the second transistor; a backside via below the power rail via, the backside via having a first portion directly contacting the power rail via and a second portion underneath the first portion; and an isolation spacer surrounding the second portion of the backside via. The backside via further includes a third portion underneath the second portion. A backside capping layer underneath the isolation spacer surrounds the third portion of the backside via. A method of forming the same is also provided.

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