Semiconductor device

Abstract

A semiconductor device includes a substrate including a first surface and a second surface opposite to the first surface, a first active pattern on the first surface of the substrate and extending in a first direction, a first gate structure on the first active pattern and extending in a second direction intersecting the first direction, a first epitaxial pattern on at least one side of the first gate structure and connected to the first active pattern, a first frontside source / drain contact on a first surface of the first epitaxial pattern and connected to the first epitaxial pattern, a frontside wiring structure on a first surface of the first frontside source / drain contact and connected to the first frontside source / drain contact, and an insulating pattern on a second surface of the first gate structure and extending in the second direction.

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