Integrated circuit device and manufacturing method of integrated circuit device
TW202635016APending Publication Date: 2026-08-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114126978
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-05-28
- Filing Date
- 2025-07-16
- Publication Date
- 2026-08-16
Smart Images
Figure TWG2TA001072520_001 
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Figure TWG2TA001072520_003
Abstract
An IC device includes a first transistor, and a second transistor. The first transistor includes a first terminal configured to receive a first power supply voltage, a second terminal, and a gate terminal. The gate terminal is configured to receive a second power supply voltage different from the first power supply voltage, or a first voltage corresponding to the first power supply voltage, or a second voltage corresponding to the second power supply voltage. The second transistor includes two terminals electrically coupled to the second terminal of the first transistor.
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