Nitride semiconductor light-emitting devices and methods for manufacturing nitride semiconductor light-emitting devices

Abstract

In nitride semiconductor light-emitting elements, the decrease in luminous efficiency is suppressed, and the emission wavelength is lengthened. A nitride semiconductor light-emitting element comprises: a high-concentration N-type nitride semiconductor layer 7 containing a high concentration of N-type impurities; a low-concentration N-type nitride semiconductor layer 8 containing N-type impurities at a lower concentration than those in the high-concentration N-type nitride semiconductor layer; a nitride semiconductor light-emitting layer 9 composed of an indium-containing nitride semiconductor layer; and a P-type nitride semiconductor layer 10 containing P-type impurities; further, a nitride semiconductor layer 6 doped with rare-earth elements, containing rare-earth elements, is disposed below the lower-concentration N-type nitride semiconductor layer 8; the average concentration of rare-earth elements in the nitride semiconductor light-emitting layer 9 is 1E18 / cm3 or less.

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