Optoelectronic device

Abstract

An optoelectronic device includes a first semiconductor structure; a semiconductor mesa formed on the first semiconductor structure and including an active structure and a second semiconductor structure; a first recessed region exposing the first semiconductor structure and surrounding the semiconductor mesa; a contact electrode formed on the second semiconductor structure; and an insulating reflective structure including a plurality of insulating reflective structure openings formed on the contact electrode, wherein the plurality of insulating reflective structure openings includes a first insulating reflective structure opening and a plurality of second insulating reflective structure openings exposing the contact electrode, and the first insulating reflective structure opening is closer to the first recessed region than the plurality of second insulating reflective structure openings, and in a top view of the optoelectronic device, the first insulating reflective structure opening includes an annular opening arranged along a first boundary between the first recessed region and the semiconductor mesa, the annular opening includes a first length along the first boundary, and the ratio between the first length and a length of the first boundary is greater than

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