Semiconductor device manufacturing equipment and semiconductor device manufacturing method

Abstract

A method for manufacturing a semiconductor device is provided, comprising: increasing the internal temperature of a process chamber on which a substrate is disposed; forming a deposition film on the substrate after the temperature inside the process chamber rises to a certain value; and decreasing the temperature inside the process chamber after forming the deposition film. The deposition film forming method includes: delivering a first fluid and a second fluid into the process chamber at a first pressure; and after delivering the first fluid and the second fluid, delivering a third fluid into the process chamber at a second pressure. The first fluid contains a metallic element, and the second fluid and the third fluid each contain a chalcogen element, wherein the second pressure is higher than the first pressure.

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