Methods for forming seed layer and plasma etching process

Abstract

According to embodiments, a method for forming a seed layer comprises: an operation of forming an ion-passage hole by removing a portion of an insulating layer in a workpiece arranged such that a metal-pattern layer is disposed below and the insulating layer is disposed over it; a masking operation of forming a metal mask layer on the insulating layer; and a sputtering operation of forming a seed layer on the insulating layer by plasma sputtering; wherein the metal mask layer is connected to the metal-pattern layer through a sidewall surface of the ion-passage hole. According to embodiments, a plasma etching method comprises: an operation of forming an ion-passage hole by removing a portion of an insulating layer in a workpiece arranged such that a metal-pattern layer is disposed below and the insulating layer is disposed over it; a masking operation of disposing a metal mask layer on the insulating layer; and a via-forming operation of providing a blind via in the insulating layer by plasma etching; wherein the metal mask layer is connected to the metal-pattern layer through a sidewall surface of the ion-passage hole.

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