Low-k sioc etch resistance improvement by hot implant
TW202635055APending Publication Date: 2026-08-16APPLIED MATERIALS INC
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Patent Information
- Application Number
- TW114147721
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-05
- Filing Date
- 2025-12-05
- Publication Date
- 2026-08-16
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Figure TWG2TA001073164_001 
Figure TWG2TA001073164_002 
Figure TWG2TA001073164_003
Abstract
Methods and devices for depositing a dielectric material on a substrate are provided herein. Embodiments include depositing a dielectric material on a feature of a substrate. Embodiments further applying a dopant to the deposited dielectric material. Embodiments further include performing an etching process with respect to the doped deposited dielectric material.
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