Inhibitor-free gapfill process method and hardware
TW202635059APending Publication Date: 2026-08-16TOKYO ELECTRON LTD
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Patent Information
- Application Number
- TW114138160
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-10-07
- Filing Date
- 2025-10-02
- Publication Date
- 2026-08-16
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Abstract
Aspects of the present disclosure provide an inhibitor-free method for filling a recessed feature of a substrate. For example, the inhibitor-free method can include providing a substrate that has a recessed feature, forming a first layer of an insulating material on the substrate to cover a sidewall and bottom of the recessed feature, removing a portion of the first layer such that the recessed feature with the first layer remaining therein slopes outward, and forming a second layer of the insulating material on the substrate to cover the first layer remaining in the recessed feature.
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