Etch with conformal deposition liner

Abstract

A method of etching features in a silicon containing stack is provided. Features are partially etched in the stack, wherein the features have sidewalls. A protective film is deposited on the sidewalls of the features, comprising a plurality of cycles, wherein each cycle comprises sequential steps of providing a first precursor of a diamine that deposits a monolayer of the first precursor on sidewalls of the features and a second precursor of an organic molecule that deposits a monolayer of the second precursor on sidewalls of the features. The features are further etched.

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