Etching method and etching apparatus

Abstract

A technique is provided that can adjust the etching amount distribution within a substrate surface. The etching method disclosed herein includes the following actions: preparing a substrate with a first film on its surface; and etching the first film; the etching action includes the following actions: supplying a first gas containing an alkaline gas but not a halogen-containing gas from the outer radial direction of the substrate toward the substrate; and after supplying the first gas, supplying a second gas containing the halogen-containing gas and the alkaline gas from the outer radial direction of the substrate toward the substrate.

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