Etching method and etching apparatus

Abstract

The objective of this invention is to efficiently etch a SiOCN film. An etching method is provided, which involves etching a SiOCN film formed on a substrate by exposing the SiOCN film to a plasma generated from an etching gas containing a nitrogen-free fluorine gas, an oxygen-containing gas, and hydrogen. During the etching process of the SiOCN film, efficient etching can be achieved to give the film surface a smooth surface texture. Furthermore, the SiOCN film can be selectively etched relative to SiN films, OX films, Si films, SiGe films, etc.

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