Direct bonding of heterogeneous substrates

TW202635081APending Publication Date: 2026-08-16AMERICAN CO ADIA SEMICON BONDING TECH CO LTD
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Patent Information

Application Number
TW115117277
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2019-07-02
Filing Date
2019-07-03
Publication Date
2026-08-16

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Abstract

nanometers. The intermediary may comprise silicon. The dissimilar materials may have significantly different coefficients of thermal expansion (CTEs) and / or significantly different crystal-lattice unit cell geometries or dimensions, conventionally resulting in too much strain to make direct-bonding feasible. A curing period at ambient room temperature after the direct bonding of dissimilar materials allows direct bonds to strengthen by over
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