Method for temporary bonding and debonding, composite substrate fabrication, and wafer manufacturing

Abstract

This application belongs to the field of semiconductor processing and manufacturing. It provides a method for temporary bonding and debonding, a method for preparing a composite substrate, and a method for manufacturing a wafer. The temporary bonding and debonding method includes forming silicon oxide layers on two silicon substrates, performing ion implantation, hydrofluoric acid treatment, and plasma activation on the silicon oxide layers, achieving temporary bonding between the two silicon substrates through hydrophilic bonding, and then debonding through debonding annealing to crack the temporary bonding interface and achieve debonding. This method eliminates the need for bonding media and maintains consistent thermal properties between the two substrates, effectively preventing warping and breakage. The temporary bond exhibits high strength and stability. This method enables significant thinning of functional substrates, thereby preparing composite substrates or further used to manufacture multilayer wafer bonding structures.

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