Method for determining wafer uniformity

Abstract

Techniques for measuring uniformity of layer thicknesses on semiconductor wafers are described herein. The techniques can include capturing an image of a portion of a wafer with a transmission electron microscope. The wafer includes a plurality of alternating layers of a first material and a second material. The techniques can include determining pixel intensities across the plurality of alternating layers in the image. The techniques can include fitting the pixel intensities to a model that is descriptive of a trend in the pixel intensities. The techniques can include determining a thickness for a first layer of the wafer based on the model.

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