Modifying openings of an extreme ultraviolet masking layer

Abstract

A method of modifying an opening in a masking material layer provided on a substrate to achieve desired critical dimensions may include forming a plurality of openings in the masking material layer, and performing one or more ion processes on the masking material layer to enlarge or reduce one or more dimensions of the plurality of openings. A first ion process of the one or more ion processes may include directionally depositing a material layer on the masking material layer by directing a material beam at a first non-zero angle relative to a normal direction extending from a top surface of the masking material layer. A second ion process of the one or more ion processes may include performing an angled ion etch by delivering an ion beam at a second non-zero angle relative to the normal direction extending from the top surface of the masking material layer.

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