Semiconductor device and methods of formation

Abstract

Electrically conductive material of an interconnect structure in an interconnect layer of a semiconductor device is deposited in a manner that reduces the likelihood of void formation in the interconnect structure. A recess may be formed in a dielectric layer in the interconnect layer. A seed layer may be deposited on sidewalls and on a bottom surface of the recess. An oxidation treatment operation may be performed to oxidize portions of the seed layer on the sidewalls of the recess, and an etch operation may be performed to etch the seed layer to remove the oxidized portions of the seed layer from the sidewalls. The remaining portions of the seed layer at the bottom of the recess is then used as a base on which additional material of the interconnect structure is deposited.

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