Mechanical substrate with matched coefficient of thermal expansion

Abstract

A semiconductor device comprises a first substrate and a semiconductor die mechanically coupled to the first substrate. The coefficient of linear thermal expansion (CTE) of the first substrate is similar to the CTE of the semiconductor die. The substrate may comprise single-crystal 4H silicon carbide. One or more insulating layers may be disposed over the first substrate. A second substrate may be disposed adjacent to a side of the semiconductor die opposite the side the first substrate is disposed adjacent to. One or more terminals may be disposed over a first surface of the first substrate, one or more backside terminals may be disposed over a second surface of the first substrate opposite the first surface, and the one or more terminals may be respectively electrically coupled to the one or more backside terminals through the first substrate.

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