Method of manufacturing metal layer having increased oxidation resistance and method of manufacturing semiconductor package

TW202635170APending Publication Date: 2026-08-16SAMSUNG ELECTRONICS CO LTD +1
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Patent Information

Application Number
TW115101329
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-04-25
Filing Date
2026-01-14
Publication Date
2026-08-16

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Patent Text Reader

Abstract

A method of manufacturing a metal layer having increased oxidation resistance is presented. The method includes allowing an electride layer and a metal layer to be in contact with each other and annealing the electride layer and the metal layer such that the metal layer is reduced by the electride layer. A method of manufacturing a semiconductor package is also provided.
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