Semiconductor device and method of forming stacked aip structure
TW202635174APending Publication Date: 2026-08-16JCET STATS CHIPPAC KOREA LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114147352
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-02-05
- Filing Date
- 2025-12-03
- Publication Date
- 2026-08-16
Smart Images

Figure TWG2TA001073138_001 
Figure TWG2TA001073138_002 
Figure TWG2TA001073138_003
Abstract
A semiconductor device has an antenna substrate, an electrical component disposed over the antenna substrate, and a semiconductor assembly disposed over the electrical component. The electrical component has a first active surface and second active surface opposite the first active surface with a conductive via extending between the first active surface and second active surface. An encapsulant is deposited over and around the antenna substate and electrical component. An encapsulant can be deposited over the semiconductor assembly. A portion of the encapsulant is removed to expose the semiconductor assembly. A mask is disposed over the semiconductor assembly. A shielding layer is disposed over and around the antenna substate, electrical component, and semiconductor assembly. The mask blocks the shielding layer from covering a portion of the semiconductor assembly. The mask is removed, and an electrical connector is disposed over the semiconductor assembly previously protected by the mask.
Need to check novelty before this filing date? Find Prior Art