Semiconductor device and method of forming stacked aip structure

TW202635174APending Publication Date: 2026-08-16JCET STATS CHIPPAC KOREA LTD
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Patent Information

Application Number
TW114147352
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-05
Filing Date
2025-12-03
Publication Date
2026-08-16

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    Figure TWG2TA001073138_003
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Abstract

A semiconductor device has an antenna substrate, an electrical component disposed over the antenna substrate, and a semiconductor assembly disposed over the electrical component. The electrical component has a first active surface and second active surface opposite the first active surface with a conductive via extending between the first active surface and second active surface. An encapsulant is deposited over and around the antenna substate and electrical component. An encapsulant can be deposited over the semiconductor assembly. A portion of the encapsulant is removed to expose the semiconductor assembly. A mask is disposed over the semiconductor assembly. A shielding layer is disposed over and around the antenna substate, electrical component, and semiconductor assembly. The mask blocks the shielding layer from covering a portion of the semiconductor assembly. The mask is removed, and an electrical connector is disposed over the semiconductor assembly previously protected by the mask.
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