Method for manufacturing a bonded wafer structure

Abstract

The invention relates to a method for manufacturing a bonded wafer structure. The method comprises providing a top and a handle wafer structures, each comprising a hydrophilic bonding surface, obtaining waviness information of at least one of the bonding surfaces, adjusting at least one bonding process parameter to a predetermined value based on the waviness information, where adjusting of said bonding process parameter modifies the moisture bound to the at least one of the bonding surfaces, and bonding the top and handle wafer structures at the predetermined value of the bonding process parameter. The adjusting step may comprise adjusting the pressure in the bonding chamber to an intermediate pressure being in low vacuum range, and / or adjusting temperature of the top and / or handle wafer to an intermediate temperature higher than room temperature. The invention further relates to the bonded wafer structure obtained by said method.

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