Laser processing method and semiconductor device manufacturing method

Abstract

According to this laser processing method, the process includes a first step of forming a protective film on the surface of the device layer of the object, a second step of forming a plurality of trenches along the grid region in the protective film and the device layer by irradiating a first laser light, a third step of forming a modified region on the substrate of the object along the grid region by irradiating a second laser light, and a fourth step of removing the protective film from the surface of the device layer (22). The first laser light includes a plurality of processing lights that are diffracted and a plurality of higher-order lights. The energy of each of the plurality of processing lights is greater than the energy of each of the plurality of higher-order lights.

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