Radiation-sensitive resist composition and pattern formation method using the same

TW202635593APending Publication Date: 2026-09-01SAMSUNG ELECTRONICS CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW115102217
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-09-05
Filing Date
2026-01-20
Publication Date
2026-09-01

Smart Images

  • Figure TWG2TA001075173_001
    Figure TWG2TA001075173_001
  • Figure TWG2TA001075173_002
    Figure TWG2TA001075173_002
  • Figure TWG2TA001075173_003
    Figure TWG2TA001075173_003
Patent Text Reader

Abstract

A radiation-sensitive resist composition including an ionic salt (A); and a solvent (B). The ionic salt (A) including an ion (a) and a counter ion (b); the ion (a) having a metal chalcogenide cluster structure; and the counter ion (b) having a charge counter to a charge of the ion (a). The ion (a) substantially consists of a halogen atom and at least one metal atom selected from Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Sb, Hf, Ta, W, Re, Os, Ir, Pt, Hg, Pb, or Bi.
Need to check novelty before this filing date? Find Prior Art