Onium salt, chemically amplified resist composition, and pattern forming process

TW202635618APending Publication Date: 2026-09-01SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW115116763
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-08-04
Filing Date
2024-07-31
Publication Date
2026-09-01

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Abstract

is a group having a partial structure of the following formula (1a), wherein Q1 to Q3 are each independently a hydrogen atom, a fluorine atom, or a C1-C6 fluorinated saturated hydrocarbyl group, provided that, when both of Q1 and Q2 are a hydrogen atom, Q3 is a fluorine atom or a C1-C6 fluorinated saturated hydrocarbyl group, and the total number of fluorine atoms in Q1 to Q3 is
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