Silicon Etching Solution, Etching Method and Manufacturing Method of Semiconductor Substrate

TW202635860APending Publication Date: 2026-09-01KAO CORP
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Patent Information

Application Number
TW114142071
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-10-24
Filing Date
2025-10-30
Publication Date
2026-09-01

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Abstract

In one embodiment, the present invention provides a silicon etching solution that suppresses the formation of micropyramids that cause deterioration of the surface roughness of a silicon substrate. In one embodiment, the present invention relates to a silicon etching solution comprising a primary diamine (component A) and a quaternary ammonium salt (component B), wherein the content of component B is 12% by mass or more.
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