Mask, masking device and vapor deposition method

Abstract

The mask disclosed herein may include: a substrate comprising a first surface and a second surface opposite to the first surface, containing silicon or a silicon compound, and having a reference thickness; and a mask layer comprising a third surface facing the second surface and a fourth surface opposite to the third surface. The substrate may include an inner region and an outer region located on the outer side of the inner region when viewed from above. The inner region may include: a plurality of first openings extending from the first surface to the second surface; a plurality of first ribs located between the plurality of first openings and extending along a first direction; and a plurality of second ribs located between the plurality of first openings, extending along a second direction different from the first direction, and intersecting with the first ribs. The outer region may include a plurality of recesses. The mask layer may include a plurality of second openings overlapping the first openings when viewed from above, and extending from the third surface to the fourth surface.

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