Manufacturing method of multi-layered structures

Abstract

The method for manufacturing a multilayer structure of the present invention comprises: a first epitaxial film formation step, wherein a first layer oriented along the (100) surface is formed on the (100) surface of a silicon substrate by sputtering; a second epitaxial film formation step, wherein a second layer of Pt oriented along the (100) surface is formed on the first layer by sputtering; and a third epitaxial film formation step, wherein a third layer oriented along the (100) surface is formed on the second layer by sputtering.

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