Method for depositing copper thin film in through glass via using atomic sputtering epitaxy

TW202635918APending Publication Date: 2026-09-01CIT CO LTD
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Patent Information

Application Number
TW114130206
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-26
Filing Date
2025-08-07
Publication Date
2026-09-01

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Abstract

This invention relates to electronic packaging and semiconductor process technology using through glass via (TGV) technology, and to a method of improving electrical properties through more reliable copper (Cu) thin film deposition. The copper thin film deposition method in TGV using atomic layer sputtering epitaxy (ASE) according to this invention is characterized by uniformly depositing a copper thin film inside and on the surface of TGV (Through Glass Via) using an atomic layer sputtering epitaxy (ASE) process, but depositing a copper thin film so that the upper and lower electrical resistance of the TGV is less than
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