Methods for manufacturing reflective photomasks, reflective blank photomasks, and reflective photomasks

TW202635919APending Publication Date: 2026-09-01SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW114149429
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-17
Filing Date
2025-12-16
Publication Date
2026-09-01

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Abstract

[Solution] A reflective photomask comprising: a substrate, a multilayer reflective film, a protective film, and a pattern of a light-absorbing film. The protective film is composed of multiple layers, including: a single layer A containing rhodium (Rh) with a thickness of 0.5-2 nm; one or more layers B containing niobium (Nb) but not rhodium (Rh), with a niobium (Nb) content of 10 atomic% or more and a thickness of 0.5-2 nm; and one or more layers C containing ruthenium (Ru) but not rhodium (Rh) or niobium (Nb) and a thickness of 0.5-2 nm. Layer A is connected to the pattern of the light-absorbing film, and one layer of layer C is connected to the multilayer reflective film. [Effect] A reflective photomask is provided that possesses a protective film that is not prone to bubbling defects even in the presence of hydrogen and under extreme ultraviolet light irradiation.
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