Methods for forming transition metal disulfide films

TW202635925APending Publication Date: 2026-09-01TOKYO ELECTRON LTD +1
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Patent Information

Application Number
TW115100760
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-20
Filing Date
2026-01-08
Publication Date
2026-09-01

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Abstract

A method for forming a transition metal dichalcogenide film includes steps (A), (B), and (C). Step (A) involves providing a substrate having a plurality of adjacently arranged films containing different transition metals. Step (B) involves annealing the substrate at a first temperature in a gaseous environment containing a sulfiding gas or an inactive gas. Step (C) involves annealing the substrate at a second temperature higher than the first temperature in a gaseous environment containing a sulfiding gas after step (B).
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