Methods for forming molybdenum sulfide films

TW202635928APending Publication Date: 2026-09-01TOKYO ELECTRON LTD +1
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Patent Information

Application Number
TW114140493
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-10-29
Filing Date
2025-10-20
Publication Date
2026-09-01

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Abstract

This invention provides a technique for improving the crystallinity of molybdenum sulfide films. A method comprising fumigating a molybdenum-containing film to form a molybdenum sulfide film, and comprising the following steps: (a) providing a substrate; (b) forming a molybdenum-containing film on the substrate, the molybdenum-containing film containing MoO3, wherein the MoO3 content in the molybdenum-containing film is 60% or more; and (c) after (b), annealing the substrate in a first atmosphere containing at least one sulfiding gas selected from the group consisting of hydrogen sulfide and organosulfur compounds.
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