Film formation method and processing system

Abstract

The objective of this invention is to provide related technology to increase the concentration of n-type impurities contained in the diffusion prevention layer between the substrate and the metal silicate film. The solution is as follows: A film formation method according to one aspect of this invention includes the following steps: (a) preparing a substrate on which a doped region containing silicon and n-type impurities is formed on its surface; (b) supplying a gas containing a first metal to form an adsorption promoting layer on the doped region; (c) supplying a gas containing the aforementioned n-type impurities to form a diffusion prevention layer containing the aforementioned n-type impurities on the adsorption promoting layer; and (d) supplying a gas containing a second metal to form a first metal film on the doped region where the diffusion prevention layer is formed, thereby reacting the first metal film with the aforementioned silicon in the doped region to form a first metal silicate film.

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