Method for forming thin film

Abstract

is a method for forming a thin film by a substrate processing apparatus comprising a chamber including a first area for injecting a source gas and a second area for injecting a reactant gas, and a susceptor positioned inside the chamber and configured to support a first substrate and a second substrate, comprising a) injecting the source gas a plurality of times onto the first substrate positioned in the first area; b) continuously injecting the reactant gas onto the second substrate positioned in the second area; c) positioned the first substrate in the second area and positioning the second substrate in the first area; d) injecting the source gas a plurality of times onto the second substrate positioned in the first area; and e) continuously injecting the reactant gas onto the first substrate positioned in the second area.

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