Method for manufacturing silicon carbide polycrystalline films

Abstract

A method for manufacturing a silicon carbide polycrystalline film that can improve the productivity of silicon carbide polycrystalline films is provided. The method includes a second film-forming process of forming a second silicon carbide polycrystalline film at a predetermined location on a second support substrate having a film-forming target surface with adjusted curvature, based on the surface warpage of a first silicon carbide polycrystalline film obtained by forming a film at a predetermined location on the film-forming target surface of a first support substrate having a pre-confirmed curvature.

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