Etching method
TW202635941APending Publication Date: 2026-09-01DAIKIN INDUSTRIES LTD
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Patent Information
- Application Number
- TW114146483
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-25
- Filing Date
- 2025-11-27
- Publication Date
- 2026-09-01
Abstract
etching the carbon film under plasma conditions using an etching gas containing oxygen and a reaction accelerator, wherein the oxygen in the etching gas has the greatest partial pressure, and the reaction accelerator contains nitrogen atoms.
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